XB113 Datasheet and Replacement

   Type Designator: XB113
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.09 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Max. Operating Junction Temperature (Tj): 55 °C
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO1
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