ZBF579 Specs and Replacement
Type Designator: ZBF579
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO236
ZBF579 Substitution
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ZBF579 datasheet
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Detailed specifications: XS101, ZBD849, ZBD853, ZBD857, ZBD949, ZBD953, ZBD957, ZBF569, BD135, ZDT40, ZDT41, ZDT42, ZDT44, ZDT45, ZGF300F, ZT110, ZT111
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