ZBF579 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZBF579

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO236

ZBF579 Datasheet (PDF)

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