ZT112 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZT112

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO46

ZT112 Datasheet (PDF)

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