ZT2016 Datasheet, Equivalent, Cross Reference Search

Type Designator: ZT2016

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 130 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO36

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .