ZT90 Specs and Replacement
Type Designator: ZT90
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO5
ZT90 Substitution
ZT90 datasheet
nzt902.pdf
September 2006 NZT902 tm NPN Low Saturation Transistor 4 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 90 V VCBO Collector-Base Voltage... See More ⇒
nzt902.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: ZT80 , ZT81 , ZT82 , ZT83 , ZT84 , ZT87 , ZT88 , ZT89 , D965 , ZT91 , ZT92 , ZT93 , ZT94 , ZT95 , ZTX1047A , ZTX1048A , ZTX1049A .
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