ZTX108M Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX108M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 125
Noise Figure, dB: -
Package: TO92
ZTX108M Transistor Equivalent Substitute - Cross-Reference Search
ZTX108M Datasheet (PDF)
ztx1053a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1053AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i D D E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1053AELECTRICAL CHARACTERISTICS (at Tamb
ztx1055a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1055AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i i D i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1055AELECTRICAL CHARACTERISTICS (at T
ztx1047a.pdf
Si i O A A Di O ZT 0 AHi H Ai T A SiSTO iSS A A Y T V i V I i i i I TI D D I i i in TO o a i I A SO T A i ATi S T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 A T i A HA A T iSTi S a Ta unI o h i a T I T IT DITI II V V I V I II i V V I
ztx1051a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1051AHIGH GAIN TRANSISTORISSUE 3 FEBRUARY 95 T V V V i V I i i I I i I TI i i i i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1051AELECTRICAL CHARACTERISTICS (at Tam
ztx1048a.pdf
Si i O A A Di O ZT 0 8AHi H Ai T A SiSTO iSS A Y T V V V V i V I i i I I TI D Ii i i in D D TO o a i I A SO T A i ATi S T T 8 IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 8A T i A HA A T iSTi S a Ta unI o h i a T 8 T IT DITI I T II V 8 V
ztx1049a.pdf
A Product Line of Diodes Incorporated ZTX1049A Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 4 A Peak Pulse Current ICM 20 A Base Current IB 500 mA Thermal Characteristics (@TA = +25C, unless ot
ztx1056a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1056AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I i V I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1056AELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
