ZTX114 Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX114
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
ZTX114 Transistor Equivalent Substitute - Cross-Reference Search
ZTX114 Datasheet (PDF)
ztx1149a.pdf
PNP SILICON PLANAR MEDIUM POWERZTX1149AHIGH GAIN TRANSISTORISSUE 1 - January 1997FEATURES* VCEO = - 25V* 3 Amp Continuous Current* 10 Amp Pulse Current* Low Saturation Voltage C B E* High GainE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL ZTX1149A UNITCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEB
ztx1147a.pdf
PNP SILICON PLANAR MEDIUM POWERZTX1147AHIGH GAIN TRANSISTORISSUE 1 - JANUARY 1997FEATURES* VCEO= -12V* 4 Amp Continuous Current* 20 Amp pulse Current* Low Saturation Voltage C B E* High GainE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -15 VCollector-Emitter Voltage VCEO -12 VEmitter-Base Voltage VEBO -5
ztx1151a.pdf
PNP SILICON PLANAR MEDIUM POWERZTX1151AHIGH GAIN TRANSISTORISSUE 1 - JANUARY 1997FEATURES* VCEO= -40V* 3 Amp Continuous Current* 5 Amp Pulse Current* Low Saturation voltage* High Gain C B EE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
