2N5411A Datasheet and Replacement
   Type Designator: 2N5411A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30
 W
   Maximum Collector-Base Voltage |Vcb|: 100
 V
   Maximum Collector-Emitter Voltage |Vce|: 100
 V
   Maximum Collector Current |Ic max|: 5
 A
   Max. Operating Junction Temperature (Tj): 200
 °C
   Transition Frequency (ft): 540
 MHz
   Collector Capacitance (Cc): 150
 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
		   Package: 
TO62
				
				  
				 
   - 
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2N5411A Datasheet (PDF)
 9.1.  Size:51K  philips
 2n5415 2n5416 cnv 2.pdf 
						 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
 9.2.  Size:51K  philips
 2n5415 2n5416.pdf 
						 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
 9.3.  Size:45K  st
 2n5415 2n5416.pdf 
						 
2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
 9.4.  Size:47K  st
 2n5415 2n5416 .pdf 
						 
2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
 9.5.  Size:64K  central
 2n5415 2n5416 2.pdf 
						 
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 9.6.  Size:934K  no
 2n5415u4.pdf 
						 
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
 9.7.  Size:934K  no
 2n5416ua.pdf 
						 
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
 9.8.  Size:934K  no
 2n5416u4.pdf 
						 
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
 9.9.  Size:934K  no
 2n5415ua.pdf 
						 
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
 9.10.  Size:934K  no
 2n5416s.pdf 
						 
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
 9.11.  Size:11K  semelab
 2n5414.pdf 
						 
2N5414Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3 
 9.12.  Size:11K  semelab
 2n5414cecc.pdf 
						 
2N5414CECCDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 
 9.13.  Size:140K  cdil
 2n5415 2n5416.pdf 
						 
Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emitter Voltage 
 9.14.  Size:201K  cdil
 2n5415 16.pdf 
						 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emit
 9.15.  Size:111K  china
 3ca5416 2n5416.pdf 
						 
3CA5416(2N5416) PNP      PCM TC=25 10 W ICM 1 A Tjm 175   Tstg -55~150  V(BR)CBO ICB=0.1mA 350 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=280V 50 A ICEO VEB=150V 50 A  IEBO VEB=6V 20 A  IC=0.05A VCEsat 2.5 V IB=0.
 9.16.  Size:143K  china
 3ca5415 2n5415.pdf 
						 
3CA5415(2N5415) PNP      PCM TC=25 10 W ICM 1 A Tjm 175   Tstg -55~150  V(BR)CBO ICB=0.1mA 200 V V(BR)CEO ICE=0.1mA 200 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=175V 50 A ICEO VEB=150V 50 A  IEBO VEB=4V 20 A  IC=0.05A VCEsat 2.5 V IB=0.
Datasheet: 2N5406
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, 2N5409
, 2N540A
, 2N541
, 2N5410
, 2N5411
, D209L
, 2N5412
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, 2N5416-220M
. 
Keywords - 2N5411A transistor datasheet
 2N5411A cross reference
 2N5411A equivalent finder
 2N5411A lookup
 2N5411A substitution
 2N5411A replacement