ZTX384B Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX384B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: -
Package: TO92
ZTX384B Transistor Equivalent Substitute - Cross-Reference Search
ZTX384B Datasheet (PDF)
9.1. Size:50K diodes
ztx3866.pdf
ztx3866.pdf
NPN SILICON PLANAR R.F.ZTX3866MEDIUM POWER TRANSISTORISSUE 2 MARCH 94 T 8V 8 i I T 8V i I Ti i i i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V II i V I V V i V I V V i II I Di i i i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
