ZTX510M Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX510M
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
ZTX510M Transistor Equivalent Substitute - Cross-Reference Search
ZTX510M Datasheet (PDF)
8.1. Size:51K diodes
ztx510.pdf
ztx510.pdf
PNP SILICON PLANAR HIGH SPEED0 ZTX510SWITCHING TRANSISTORISSUE 2 MARCH 94 T V I V TmAE-LinemATO92 Compatible5mA ABSOLUTE MAXIMUM RATINGS. T V IT-4 -5 II V I V V II i V I V V i V I V V I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I V I II i V V I i i V I -1.1 II I V V I
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
