2N5420 Specs and Replacement

Type Designator: 2N5420

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO92

 2N5420 Substitution

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2N5420 datasheet

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2N5420

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2N5420

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 9.2. Size:17K  semelab

 2n5428a.pdf pdf_icon

2N5420

2N5428A MECHANICAL DATA MEDIUM POWER Dimensions in mm NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25 C unless otherwise stated) VCEO Co... See More ⇒

 9.3. Size:45K  inchange semiconductor

 2n5429.pdf pdf_icon

2N5420

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE... See More ⇒

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Detailed specifications: 2N5416, 2N5416-220M, 2N5416CSM4, 2N5417, 2N5418, 2N5419, 2N541A, 2N542, BC556, 2N5421, 2N5422, 2N5423, 2N5424, 2N5424A, 2N5425, 2N5426, 2N5427

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