ZTX649 Specs and Replacement
Type Designator: ZTX649
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
ZTX649 Substitution
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ZTX649 datasheet
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Detailed specifications: ZTX601 , ZTX601A , ZTX601B , ZTX602 , ZTX603 , ZTX604 , ZTX605 , ZTX614 , D882 , ZTX650 , ZTX651 , ZTX652 , ZTX653 , ZTX654 , ZTX655 , ZTX656 , ZTX657 .
Keywords - ZTX649 pdf specs
ZTX649 cross reference
ZTX649 equivalent finder
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