ZTX652 Datasheet, Equivalent, Cross Reference Search
Type Designator: ZTX652
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
ZTX652 Transistor Equivalent Substitute - Cross-Reference Search
ZTX652 Datasheet (PDF)
ztx652 ztx653.pdf
ZTX652 Not Recommended for New Design Please Use ZTX653NPN SILICON PLANAR2 ZTX652MEDIUM POWER TRANSISTORS3 ZTX653ISSUE 2 JULY 94 T . V I V i i I V VE-LineV VTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C
ztx656 ztx657.pdf
NPN SILICON PLANAR MEDIUM POWERZTX656HIGH VOLTAGE TRANSISTORSZTX657ISSUE 2 JULY 94 T V I V i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V10 II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V
ztx654 ztx655 2.pdf
NPN SILICON PLANAR ZTX654MEDIUM POWER TRANSISTORSZTX655ISSUE 2 JULY 94 T V I V i i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V10 II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I
ztx654 ztx655.pdf
NPN SILICON PLANAR ZTX654MEDIUM POWER TRANSISTORSZTX655ISSUE 2 JULY 94 T V I V i i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V10 II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I
ztx658.pdf
NPN SILICON PLANAR MEDIUM POWERZTX658HIGH VOLTAGE TRANSISTORISSUE 2 APRIL 2002FEATURES. * 400 Volt VCEO* 0.5 Amp continuous current* Ptot=1 Watt=20VAPPLICATIONSC BMHz* Telephone dialler circuits EE-Line=100VTO92 Compatible=-20mAABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 400 VCollector-Emitter Voltage VCEO 400 V
ztx650 ztx651.pdf
NPN SILICON PLANARZTX650MEDIUM POWER TRANSISTORSZTX651ISSUE 2 JULY 94 T V I V i i I V VE-LineV V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I T I T II V 8
ztx653dcsm.pdf
ZTX653DCSMNPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)FEATURES1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR NPN 2 3TRANSISTORS1 4A HERMETIC SURFACE MOUNT PACKAGE0.236 5rad.(0.009)
ztx653lcc4.pdf
ZTX653LCC4NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040)FEATURES 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040) SILICON PLANAR NPN TRANSISTOR11 1710 187.62 (0.300) HERMETIC SURFACE MOUNT PACKAGE7.12
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
