2N5423 Datasheet and Replacement
Type Designator: 2N5423
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO62
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2N5423 Datasheet (PDF)
2n5428a.pdf

2N5428AMECHANICAL DATAMEDIUM POWERDimensions in mmNPN SILICONTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.Designed for switching andwide - band amplifierapplications1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package.ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated)VCEO Co
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf

2n5429.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
Datasheet: 2N5417 , 2N5418 , 2N5419 , 2N541A , 2N542 , 2N5420 , 2N5421 , 2N5422 , KT805AM , 2N5424 , 2N5424A , 2N5425 , 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A .
History: 2N2742 | 2S60 | 2N118 | 2N187A | 2N5937 | 2N568 | 2N2786
Keywords - 2N5423 transistor datasheet
2N5423 cross reference
2N5423 equivalent finder
2N5423 lookup
2N5423 substitution
2N5423 replacement
History: 2N2742 | 2S60 | 2N118 | 2N187A | 2N5937 | 2N568 | 2N2786



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