2N5424 Specs and Replacement
Type Designator: 2N5424
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO62
2N5424 Substitution
- BJT ⓘ Cross-Reference Search
2N5424 datasheet
2N5428A MECHANICAL DATA MEDIUM POWER Dimensions in mm NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25 C unless otherwise stated) VCEO Co... See More ⇒
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: 2N5418, 2N5419, 2N541A, 2N542, 2N5420, 2N5421, 2N5422, 2N5423, BC547B, 2N5424A, 2N5425, 2N5426, 2N5427, 2N5428, 2N5429, 2N542A, 2N543
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