All Transistors. 2N5425 Datasheet

 

2N5425 Datasheet and Replacement


   Type Designator: 2N5425
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 32 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO9
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2N5425 Datasheet (PDF)

 9.1. Size:132K  mospec
 2n5427-29 2n5430.pdf pdf_icon

2N5425

AAA

 9.2. Size:17K  semelab
 2n5428a.pdf pdf_icon

2N5425

2N5428AMECHANICAL DATAMEDIUM POWERDimensions in mmNPN SILICONTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.Designed for switching andwide - band amplifierapplications1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package.ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated)VCEO Co

 9.3. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

2N5425

 9.4. Size:45K  inchange semiconductor
 2n5429.pdf pdf_icon

2N5425

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

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Datasheet: 2N541A , 2N542 , 2N5420 , 2N5421 , 2N5422 , 2N5423 , 2N5424 , 2N5424A , 2SC2240 , 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A , 2N543 , 2N5430 , 2N5435 .

History: KTB2510 | 2SA3802 | D29E2 | BUX42 | BDS28A | 3DG2230 | 2N4143

Keywords - 2N5425 transistor datasheet

 2N5425 cross reference
 2N5425 equivalent finder
 2N5425 lookup
 2N5425 substitution
 2N5425 replacement

 

 
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