BRY56 Specs and Replacement
Type Designator: BRY56
Material of Transistor: Si
Polarity: PNPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 70 V
Maximum Collector Current |Ic max|: 0.175 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1000
BRY56 Substitution
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BRY56 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BRY56 Programmable unijunction transistor Product specification 1997 Jul 21 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification Programmable unijunction transistor BRY56 DESCRIPTION PINNING Planar PNPN trigger device in a PIN DESCRIPTION TO-92; SOT54 plast... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BRY56A Programmable unijunction transistor Product specification 1999 May 31 Philips Semiconductors Product specification Programmable unijunction transistor BRY56A DESCRIPTION PINNING Planar PNPN trigger device in a PIN DESCRIPTION TO-92; SOT54 plastic package. 1 gate 2 anode APPLICATIONS 3 cathode Switching applic... See More ⇒
Detailed specifications: BLV857 , BLV859 , BLV861 , BLV862 , BLV897 , BLW30 , BLW97 , BRY39 , 2SC2625 , BRY56A , BRY61 , BRY62 , BU1506DX , BU1507AX , BU1507DX , BU2507DF , BU2515AF .
History: 2SC3747S
Keywords - BRY56 pdf specs
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History: 2SC3747S
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