BRY56A Datasheet, Equivalent, Cross Reference Search
Type Designator: BRY56A
Material of Transistor: Si
Polarity: PNPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 70 V
Maximum Collector Current |Ic max|: 0.175 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: SOT54 TO92 SC43
BRY56A Transistor Equivalent Substitute - Cross-Reference Search
BRY56A Datasheet (PDF)
bry56a 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BRY56AProgrammable unijunctiontransistorProduct specification 1999 May 31Philips Semiconductors Product specificationProgrammable unijunction transistor BRY56ADESCRIPTION PINNINGPlanar PNPN trigger device in aPIN DESCRIPTIONTO-92; SOT54 plastic package.1 gate2 anodeAPPLICATIONS3 cathode Switching applic
bry56 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BRY56Programmable unijunctiontransistorProduct specification 1997 Jul 21Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationProgrammable unijunction transistor BRY56DESCRIPTION PINNINGPlanar PNPN trigger device in aPIN DESCRIPTIONTO-92; SOT54 plast
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GD160 | BSJ32 | NSBC123JDXV6T1G
History: GD160 | BSJ32 | NSBC123JDXV6T1G
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