BRY62 Specs and Replacement
Type Designator: BRY62
SMD Transistor Code: A51
Material of Transistor: Si
Polarity: PNPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.175 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: SOT143B
BRY62 Substitution
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BRY62 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BRY62 Silicon controlled switch Product specification 1999 Apr 22 Supersedes data of 1997 Jul 21 Philips Semiconductors Product specification Silicon controlled switch BRY62 DESCRIPTION PINNING Silicon planar PNPN switch in a PIN DESCRIPTION SOT143B plastic package. It is an 1 anode gate integrated PNP/NPN transistor pair, 2 anode with ... See More ⇒
Detailed specifications: BLV862 , BLV897 , BLW30 , BLW97 , BRY39 , BRY56 , BRY56A , BRY61 , 9014 , BU1506DX , BU1507AX , BU1507DX , BU2507DF , BU2515AF , BU2515DF , BU2522DF , BU2522DX .
History: BLV897
Keywords - BRY62 pdf specs
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History: BLV897
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