2N5438 Specs and Replacement
Type Designator: 2N5438
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 110 °C
Electrical Characteristics
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
2N5438 Substitution
- BJT ⓘ Cross-Reference Search
2N5438 datasheet
2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 4 to 10 5 10 2.5 2N5433 3 to 9 7 10 2.5 2N5434 1 to 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2N5432 ... See More ⇒
2N5430X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: 2N5428, 2N5429, 2N542A, 2N543, 2N5430, 2N5435, 2N5436, 2N5437, A42, 2N5439, 2N543A, 2N544, 2N5440, 2N544-12, 2N544-33, 2N5447, 2N5448
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