All Transistors. ZXT13N20DE6 Datasheet

 

ZXT13N20DE6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: ZXT13N20DE6
   SMD Transistor Code: N20D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.1 W
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 4.5 A
   Transition Frequency (ft): 90 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT26

 ZXT13N20DE6 Transistor Equivalent Substitute - Cross-Reference Search

   

ZXT13N20DE6 Datasheet (PDF)

 ..1. Size:419K  diodes
zxt13n20de6.pdf

ZXT13N20DE6
ZXT13N20DE6

ZXT13N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 20V Case: SOT26 IC = 4.5A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 15A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 38m for a Low Equivalent On-Resistance Moisture Sensitivity: Leve

 8.1. Size:798K  diodes
zxt13n50de6.pdf

ZXT13N20DE6
ZXT13N20DE6

A Product Line ofDiodes IncorporatedZXT13N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 4A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 36m for a Low Equivalent On-Res

 8.2. Size:434K  diodes
zxt13n15de6.pdf

ZXT13N20DE6
ZXT13N20DE6

ZXT13N15DE6SuperSOT415V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=15V; RSAT = 29m ; IC= 5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6

 9.1. Size:643K  diodes
zxt13p40de6.pdf

ZXT13N20DE6
ZXT13N20DE6

A Product Line ofDiodes IncorporatedZXT13P40DE6 40V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -40V Case: SOT26 IC = -3A Max Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 58m for a Low E

 9.2. Size:371K  diodes
zxt13p20de6.pdf

ZXT13N20DE6
ZXT13N20DE6

ZXT13P20DE6 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > -20V Case: SOT26 IC = -3.5A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 75m for a Low Equivalent On-Resistance Moisture Sensi

 9.3. Size:417K  diodes
zxt13p12de6.pdf

ZXT13N20DE6
ZXT13N20DE6

ZXT13P12DE6SuperSOT412V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 37m ; IC= -4ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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