2N5451 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5451
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -

2N5451 Transistor Equivalent Substitute - Cross-Reference Search

2N5451 Datasheet (PDF)

9.1. Size:110K motorola
2n5457re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5457/DJFETs General Purpose2N5457NChannel Depletion1 DRAIN*Motorola Preferred Device3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit123DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcCASE 2904, STYLE 5Reverse GateSource Voltage VGSR 25 VdcTO92 (TO226AA)

9.2. Size:129K fairchild semi
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

9.3. Size:59K central
2n5457 2n5458 2n5459.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.4. Size:138K onsemi
2n5457 2n5458.pdf

2N5457, 2N5458JFETs - General PurposeN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for audio and switching applications.http://onsemi.comFeatures1 DRAIN N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance3 High DC Input Resistance GATE Low Transfer and Input Capacitance

9.5. Size:65K intersil
2n5452 2n5453 2n5454.pdf