ZXTP2008Z
Datasheet, Equivalent, Cross Reference Search
Type Designator: ZXTP2008Z
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2.1
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Collector Current |Ic max|: 5.5
A
Transition Frequency (ft): 110
MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT89
ZXTP2008Z
Transistor Equivalent Substitute - Cross-Reference Search
ZXTP2008Z
Datasheet (PDF)
..1. Size:489K diodes
zxtp2008z.pdf
GreenZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > -30V Case: SOT89 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
6.1. Size:444K diodes
zxtp2008g.pdf
ZXTP2008G Green30V PNP LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -30V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
7.1. Size:126K diodes
zxtp2009z.pdf
ZXTP2009Z40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTORIN SOT89SUMMARYBVCEO = -40V : RSAT = 29m ; IC = -5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 40V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURESSOT89 Extremely low equivale
7.2. Size:263K diodes
zxtp2009zq.pdf
ZXTP2009ZQ 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT89 requirement of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: F
7.3. Size:94K diodes
zxtp2006e6.pdf
ZXTP2006E620V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6SUMMARYBVCEO = -20V : RSAT = 31m ; IC = -3.5ADESCRIPTIONPackaged in the SOT23-6 outline this new lowsaturation 20V PNP transistor offers extremely low onstate losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT23-6 3.5 Amps continuous current Extre
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