FCX555 Datasheet, Equivalent, Cross Reference Search
Type Designator: FCX555
SMD Transistor Code: 555
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2.1 W
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Collector Current |Ic max|: 0.7 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
FCX555 Transistor Equivalent Substitute - Cross-Reference Search
FCX555 Datasheet (PDF)
fcx555.pdf
A Product Line of Diodes Incorporated FCX555 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Limit Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEV -180 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -0.7 A Peak Pulse Current ICM -2 A Thermal Characteristics (@
fcx558.pdf
FCX558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -400V Case: SOT89 IC = -200mA High Continuous Current Case Material: Molded Plastic. Green Molding Compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics up to -100mA Moisture Sensitivity: Level 1 per J-STD-020
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
