ZXTN5551Z Specs and Replacement
Type Designator: ZXTN5551Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 0.6 A
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT89-3L
ZXTN5551Z Substitution
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ZXTN5551Z datasheet
NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features B 160V rating SOT89 package E Applications E High voltage amplificatio... See More ⇒
ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features B 160V rating SOT23 package E Applications E High voltage amplification C Ordering information Device Reel size Tape w... See More ⇒
NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case SOT223 Case material Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020... See More ⇒
Detailed specifications: ZDT795A, ZTX560, ZX5T955G, ZX5T955Z, ZXTN08400BFF, ZXTN10150DZ, ZXTN5551FL, ZXTN5551G, BC327, ZXTP03200BG, ZXTP03200BZ, ZXTP08400BFF, ZXTP2014G, ZXTP2014Z, ZXTP23140BFH, ZXTP25140BFH, ZXTP5401FL
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