ZXTN5551Z Datasheet, Equivalent, Cross Reference Search
Type Designator: ZXTN5551Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 0.6 A
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT89-3L
ZXTN5551Z Transistor Equivalent Substitute - Cross-Reference Search
ZXTN5551Z Datasheet (PDF)
zxtn5551z.pdf
NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z160V, SOT89, NPN high voltage transistor SummaryBVCEO > 160VBVEBO > 6VIC(cont) = 600mAPD = 1.2W Complementary part number ZXTP5401ZDescriptionCA high voltage NPN transistor in a small outline surface mount packageFeaturesB 160V rating SOT89 packageEApplicationsE High voltage amplificatio
zxtn5551fl.pdf
ZXTN5551FL160V, SOT23, NPN High voltage transistorSummary BVCEO > 160VBVEBO > 6VIC(cont) = 600mA PD = 330mWComplementary part number ZXTP5401FLDescriptionCA high voltage NPN transistor in a small outline surface mount package.FeaturesB 160V rating SOT23 packageEApplicationsE High voltage amplificationCOrdering informationDevice Reel size Tape w
zxtn5551g.pdf
NOT RECOMMENDED FOR NEW DESIGN A Product Line ofUSE DZT5551Diodes IncorporatedZXTN5551G160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: Molded Plastic. Green Molding Compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
