2N55 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5550/DAmplifier Transistors2N5550NPN Silicon*2N5551*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5550 2N5551 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 140 160 VdcCollectorBase Voltage VCBO 160 180 VdcEmitterB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5555/DJFET SwitchingNChannel Depletion1 DRAIN2N55553GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc1DrainGate Voltage VDG 25 Vdc23GateSource Voltage VGS 25 VdcForward Gate Current IGF 10 mAdcCASE 2904, STYLE 5TO92 (TO226AA)Total Devic

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistorsProduct specification 2004 Oct 28Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATIONS

STL32N55M5N-channel 550 V, 0.085 , 26 A PowerFLAT (8x8) HVultra low gate charge MDmesh V Power MOSFETPreliminary dataFeaturesVDSS @ RDS(on) Type IDS(3) Bottom viewTJmax maxS(3)S(3)G(1)STL32N55M5 600 V

STP32N55M5, STW32N55M5N-channel 550 V, 0.074 , 29 A, MDmesh V Power MOSFETin TO-220 and TO-247Preliminary dataFeaturesVDSS RDS(on) Order codes ID@TJmax maxSTP32N55M5550 V

2N5551HRHi-Rel NPN bipolar transistor 160 V, 0.5 ADatasheet - production dataFeatures3BVCEO 160 V11 IC (max) 0.5 A223HFE at 5 V - 10 mA > 80 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5551HR is a silicon planar NPN transistor spe

June 20092N5551 / MMBT5551NPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT555132TO-92SOT-23

AmpIifier Transistor Collector-Emitter Voltage: VCEO= 140V Collector Dissipation: PC (max)=625mWTO-92 1. Emitter 2. Base 3. CollectorNPN EpitaxiaI SiIicon TransistorAbsoIute Maximum Ratings Ta=25C unless otherwise noted SymboI Parameter VaIue UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 140 VVEBO Emitter-Base Voltage 6 VIC

2N5551 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 180 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 625 mWJu

2N5545/46/47/JANTX/JANTXVVishay SiliconixMonolithic N-Channel JFET DualsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)2N5545 0.5 to 4.5 50 1.5 50 52N5546 0.5 to 4.5 50 1.5 50 102N5547 0.5 to 4.5 50 1.5 50 15FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match

2N5564/5565/5566Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV)2N5564 -0.5 to -3 -40 7.5 -3 52N5565 -0.5 to -3 -40 7.5 -3 102N5566 -0.5 to -3 -40 7.5 -3 20FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High

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HiPerFETTMVDSS = 550 VIXFN 72N55Q2Power MOSFETID25 = 72 ARDS(on)= 72 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 550 VVDGR TJ = 25C to 150

HiPerFETTMVDSS = 550 VIXFB 72N55Q2Power MOSFETsID25 = 72 AQ-ClassRDS(on)= 72 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetPLUS 264TM (IXFB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 550 VVDGR TJ = 25C to 150C; RGS = 1 M

HiPerFETTM IXFH 22 N55 VDSS = 550 VPower MOSFET ID (cont) = 22 ARDS(on) = 0.27 WN-Channel Enhancement Modetrr 250 nsAvlanche Rated, High dv/dt, Low trrPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 550 VVDGR TJ = 25C to 150C; RGS = 1 MW 550 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C22 AIDM TC =

MCCMicro Commercial ComponentsTM2N555120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features This device is designed for general purpose high voltage amplifiers NPN Generaland gas discharge display drivers.Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Tr

2N5550, 2N5551Preferred DeviceAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO Vdc2N5550 14012N5551 160EMITTERCollector - Base Voltage VCBO Vdc2N5550 1602N5551 180Emitter - Base Voltage VEBO 6.0 VdcTO-92CASE 29Collector Curr

March March 201882N5551 / MMBT5551NPN General-Purpose AmplifierDescriptionThis device is designed for general-purpose high-voltageamplifiers and gas discharge display drivers. 2N5551 MMBT555132TO-92SOT-231Marking: 3S1. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Top Mark Package Packing Method2N5551TA 5551 TO-92 3L Ammo2N5551TFR 5551 TO-92 3L

2N5550, 2N5551Preferred DeviceAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO Vdc2N5550 14012N5551 160EMITTERCollector - Base Voltage VCBO Vdc2N5550 1602N5551 180Emitter - Base Voltage VEBO 6.0 VdcTO-92CASE 29Collector Curr

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2N5551G-x-AB3-R SOT-89 B C E Tape

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-

2N5551NPN Silicon TransistorDescriptions PIN Connection General purpose amplifier C High voltage application Features B High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : EVCE(sat)=0.5V(MAX.) TO-92 Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551

2N5551NSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9

2N5551CNSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92NOutline Dimensions unit : mm 4.20

2N5551DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 160V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.

2N5583Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N5583Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N5599Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5575Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 70V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N5551CSM HIGH VOLTAGE NPNSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31 FEATURESrad.(0.012) SILICON PLANAR EPITAXIAL NPN 3TRANSISTOR HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.9

2N5597Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5551NPN Silicon Elektronische BauelementeGeneral Purpose Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-924.550.2 3.50.2FEATURES* Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.080.0746+0.10. 0.1(1.27 Typ.)1: Emitter+0.21.250.22: Base1 2 33: Colle

2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Switching and amplification in high voltage TO-92 Applications such as telephony Low current(max.600mA) High voltage(max.160V) G HJMillimeter REF. A DMin. Max. A 4.40 4.70 Collector B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551TO- 92CBECBEHigh Voltage NPN Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 160 VCollector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic PackageHigh Voltage NPN Transistor For General Purpose and Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 140 VVCBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE General Purpose Switching Application 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551K TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE Equivalent Circuit 2N5551K=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2N5550 TRANSISTOR (NPN)TO-92 FEATURES Switching and mplification in igh oltage1.EMITTER Applications such as elephony Low urrent( ax. 600mA)2.BASE High oltage( ax.160V)3.COLLECTOR Equivalent Circuit 2N5550=Device code 2N Solid dot=Green molding compound device

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5559 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outlin

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

SEMICONDUCTOR 2N5551TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEK Low Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00 Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.

SEMICONDUCTOR 2N5551STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=180V, VCEO=160V 3 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=50nA(Max.) VCB=120VJ 0.13+

SEMICONDUCTOR 2N5550TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=160V, VCEO=140VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=100nA(Max.), VCB=100VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.25V(Max.)

SEMICONDUCTOR 2N5550STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+2.93 0.20AB 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=160V, VCEO=140V 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=100nA(Max.) VCB=100VJ 0.13+0.

SEMICONDUCTOR 2N5551CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.),

SEMICONDUCTOR 2N5551SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LFEATURES High Collector Breakdwon VoltageDIM MILLIMETERS_+A 2.90 0.123: VCBO=180V, VCEO=160VB 1.30+0.20/-0.15C 1.30 MAXLow Leakage Current. 1D 0.40+0.15/-0.05: ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20G 1.90Low Saturatio

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 50 Vdc VCEO Collector-Base Voltage 75 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 800 mAdc IC Total Power Dissipation @ T = 250C (1) 0.5 W A

2N5551(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR FeaturesSwitching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V

2N5550(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 160 V V

2N5551NPN TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol2N5551 UnitCollector-Emitter Voltage VCEO 160 VdcCollector-Base Voltage VCBO 180VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC600 mAdcPDTotal Device Dissipation T =25 C WA0.625Junction Temperature T 150j CStorage, Temperature Tstg

Spec. No. : HE6219HI-SINCERITYIssued Date : 1992.09.21Revised Date : 2004.12.28MICROELECTRONICS CORP.Page No. : 1/5H2N5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5551 is designed for amplifier transistor.FeaturesTO-92 Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))Absolute Maximum Ratings Maximum Temp

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony 1. EMITTER Low current(max. 600mA) 2. BASE High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parame

Typical Characterisitics 2N5551K hFE ICStatic Characteristic50 1000COMMON EMITTER300uATa=25! 270uA40Ta=100!240uA210uA30180uA100 Ta=25!150uA20120uA90uA106

TO-92 Plastic-Encapsulate TransistorsTO-92TO-92TO-92TO-92TRANSISTOR (NPN)2N5551 TRANSISTOR (NPN)TRANSISTOR (NPN)TRANSISTOR (NPN)FEATURESFEATURESFEATURESFEATURES Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage1. EMlTTER

2N5551 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , 2N5401 High voltage, complementary Pair with 2N5401. / Applications General purpose high voltage amplifier. / Equival

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

SEMICONDUCTOR2N5551TECHNICAL DATA2N5551 TRANSISTOR (NPN) B CFEATURES General Purpose Switching Application DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value UnitG 0.85H 0.45VCBO Collector-Base Voltage 180 V _HJ 14.00 0.50+L 2.30F FVCEO Collector-E

SEMICONDUCTOR 2N5550S TECHNICAL DATA 2N5551S High Voltage Transistors FEATURE Pb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping F0 3000/Tape&Reel2N5550S3 F1 3000/Tape&Reel2N5551S1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CollectorEmitter Voltage V CEO 140 Vdc SOT23 CollectorBase Voltage V CBO 160 Vdc

MAIN CHARACTERISTICS FEATURES IC 600mA Epitaxial silicon VCEO 160V High switching speed PC 625mW 2N5401A Complementary to 2N5401A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

2N5551TO-92 Plastic-Encapsulate TransistorsEquivalent Circuit FEATURES General Purpose Switching Application PNP Transistors TO 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

2N5551TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 2N5551=Device code 2NXXX=Code 1E B CORDERING INFORMATION Part Number Package Packing Method Pack Quantity2N5551 TO-92 Bulk 1000pcs/Bag2N5551-TA TO-92 Tape 2000pcs/BoxMAXIMUM RATINGS (Ta=25 unless otherwise

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO92 FEATURES Power dissipation PCM : 0.625 WTamb=25 1.EMITTER Collector current ICM: 0.6 A 2.BASE Collector-base voltage 3.COLLECTOR V(BR)CBO : 180 V 1 2 3 Operating and storage junction temperature range TJTstg: -55 t

2N5551NPN General Purpose TransistorFEATURES Epitaxial planar die construction. Complementary PNP type available (2N5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter vo

2N5551U NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 180 VCollector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 600 mAPower Dissipation Ptot 500 mWOJunction Temperature Tj 150 C OStorage T

FuXin Semiconductor Co., Ltd. Rev.A FXN32N55T Features General Description VDS = 550V The FXN32N55T uses advanced Silicons MOSFET Technology, ID = 32A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5559 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66