All Transistors. FJD5555 Datasheet

 

FJD5555 Transistor. Datasheet pdf. Equivalent

Type Designator: FJD5555

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.34 W

Maximum Collector-Base Voltage |Vcb|: 1050 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 14 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO252

FJD5555 Transistor Equivalent Substitute - Cross-Reference Search

FJD5555 Datasheet (PDF)

1.1. fjd5555.pdf Size:209K _fairchild_semi

FJD5555
FJD5555

May 2010 FJD5555 NPN Silicon Transistor Features High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter

4.1. fjd5553.pdf Size:167K _fairchild_semi

FJD5555
FJD5555

April 2008 FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5553 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter Voltage 4

Datasheet: FJA4310 , FJA4313 , FJB102 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , BC550 , FJE3303 , FJE5304D , FJI5603D , FJL4215 , FJL4315 , FJL6920(2SJ6920) , FJN3303F , FJP13007 .

 


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