FJD5555 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJD5555
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.34 W
Maximum Collector-Base Voltage |Vcb|: 1050 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 14 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO252
FJD5555 Transistor Equivalent Substitute - Cross-Reference Search
FJD5555 Datasheet (PDF)
fjd5555.pdf
May 2010FJD5555NPN Silicon TransistorFeatures High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK1Marking : J55551. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Voltage 1050 VBVCEO Collec
fjd5555tm.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjd5553.pdf
April 2008FJD5553NPN Silicon TransistorHigh Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK1Marking : J55531. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Voltage 1050 VBVCEO Collector-Emitter
fjd5553.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjd5553.pdf
isc Silicon NPN Power Transistor FJD5553DESCRIPTIONWide Safe Operation AreaHigh Voltage CapabilityFast-switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic BallastSwitch mode power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
