2N5525 Specs and Replacement
Type Designator: 2N5525
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: TO92
2N5525 Substitution
- BJT ⓘ Cross-Reference Search
2N5525 datasheet
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Detailed specifications: 2N5495, 2N5496, 2N5497, 2N5498, 2N55, 2N550, 2N551, 2N552, BD135, 2N5526, 2N5527, 2N5528, 2N5529, 2N553, 2N5530, 2N5531, 2N5532
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