15C01M Specs and Replacement
Type Designator: 15C01M
SMD Transistor Code: YP
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 330 MHz
Collector Capacitance (Cc): 3.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: MCP
15C01M Substitution
- BJT ⓘ Cross-Reference Search
15C01M datasheet
Ordering number EN7505A 15C01M Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat NPN Single MCP Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Smal... See More ⇒
Ordering number ENN7508 15C01SS NPN Epitaxial Planar Silicon Transistor 15C01SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2159A [15C01SS] Features Top View Side View Large current capacitance. 1.4 Low collector-to-emitter saturation voltage (resistance). 0.1 0.25 RCE (s... See More ⇒
Ordering number ENN7504 15C01C NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2018B [15C01C] Features Large current capacitance. 0.4 0.16 3 Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.58 [IC=0.7A... See More ⇒
Detailed specifications: ZXTN04120HFF , ZXTNS618MC , ZXTP05120HFF , ZXTPS717MC , ZXTPS718MC , ZXTPS720MC , 12A02CH , 12A02MH , 2SD2499 , 15C01SS , 15C02CH , 15C02MH , 15GN01CA , 2SA1770 , 2SA1774 , 2SA1827 , 2SA2012 .
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Keywords - 15C01M pdf specs
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