2SA2169 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2169
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TP
2SA2169 Transistor Equivalent Substitute - Cross-Reference Search
2SA2169 Datasheet (PDF)
2sa2169 2sc6017.pdf
Ordering number : ENN82752SA2169 / 2SC6017PNP / NPN Epitaxial Planar Silicon TransistorsHigh-Current Switching2SA2169 / 2SC6017ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications ( ) : 2SA2169Abs
2sa2169 2sc6017.pdf
Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R
2sa2169.pdf
isc Silicon PNP Power Transistor 2SA2169DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC6017APPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sa2169-e 2sa2169-tl-e.pdf
2SA2169/2SC6017Ordering number : EN8275ASANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2169/2SC6017 High-Current SwitchingApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching( ): 2SA
2sa2164.pdf
Transistors 2SA2164Silicon PNP epitaxial planar typeFor high-frequency amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta = 25C1.
2sa2167.pdf
2SA2167FOR HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 4.6MAX2SA2167 is a silicon PNP epitaxial type transistor. 1.6 1.5It is designed with high voltage, high Collector current, high Collector dissipation. CE BFEATURE 0.53High voltage VCEO=-60V MAX1.50.48MAX 0.4High Collector current IC=-2A 3.0Lo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
