BC847CDXV6 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BC847CDXV6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.357 W
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Collector Current |Ic max|: 0.1 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT563

BC847CDXV6 Transistor Equivalent Substitute - Cross-Reference Search

BC847CDXV6 Datasheet (PDF)

0.1. Size:68K onsemi
bc848cdxv6t1g bc847cdxv6t1g.pdf

BC847CDXV6T1,BC847CDXV6T5BC848CDXV6T1,BC848CDXV6T5Dual General Purposehttp://onsemi.comTransistorsNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forQ1 Q2low power surface mount applications. Lead-Free Solder Plating(4) (5) (6)MAXIMUM RATINGSBC847CDXV6T1Rating Symb

0.2. Size:96K onsemi
bc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forlow power surface mount applications.Q1 Q2Features These are Pb-Free Devices(4) (5) (6)BC847CDXV6T1MAXIMUM RATINGSRating Symb

0.3. Size:132K onsemi
bc847cdxv6t1g bc848cdxv6t1g.pdf

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

0.4. Size:128K onsemi
sbc847cdxv6t1g.pdf