BC847CDXV6 Specs and Replacement
Type Designator: BC847CDXV6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.357 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 0.1 A
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Package: SOT563
BC847CDXV6 Substitution
- BJT ⓘ Cross-Reference Search
BC847CDXV6 datasheet
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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose http //onsemi.com Transistors NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for Q1 Q2 low power surface mount applications. Lead-Free Solder Plating (4) (5) (6) MAXIMUM RATINGS BC847CDXV6T1 Rating Symb... See More ⇒
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BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. Q1 Q2 Features These are Pb-Free Devices (4) (5) (6) BC847CDXV6T1 MAXIMUM RATINGS Rating Symb... See More ⇒
Detailed specifications: BC846BM3T5G, BC846BPDW1, BC846C, BC847AL, BC847BDW1, BC847BL, BC847BP, BC847BPDXV6, 2SD1047, BC847CL, BC848AL, BC848BL, BC848CDW1, BC848CL, BC848CPD, BC849BL, BC849CL
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