BC857CDW1 Datasheet and Replacement
Type Designator: BC857CDW1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 0.1 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SC88 SC70 SOT363
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BC857CDW1 Datasheet (PDF)
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BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat
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BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: KT8107D2 | 3DG2222A | 2SB67H | UN9217R | 2N1056 | 2SC999A | ECG2306
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History: KT8107D2 | 3DG2222A | 2SB67H | UN9217R | 2N1056 | 2SC999A | ECG2306



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