All Transistors. BC858CDXV6 Datasheet

 

BC858CDXV6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC858CDXV6
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.357 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.1 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT563

 BC858CDXV6 Transistor Equivalent Substitute - Cross-Reference Search

   

BC858CDXV6 Datasheet (PDF)

 0.1. Size:55K  onsemi
bc858cdxv6t1g.pdf

BC858CDXV6 BC858CDXV6

BC858CDXV6T1,BC858CDXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 These are Pb-Free DevicesMAXIMUM RATINGS(4) (5) (6)Rating Symbol Value UnitCollector -Emitter Voltag

 0.2. Size:56K  onsemi
bc858cdxv6t1-5.pdf

BC858CDXV6 BC858CDXV6

BC858CDXV6T1,BC858CDXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 These are Pb-Free DevicesMAXIMUM RATINGS(4) (5) (6)Rating Symbol Value UnitCollector -Emitter Voltag

 7.1. Size:82K  onsemi
bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf

BC858CDXV6 BC858CDXV6

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 7.2. Size:156K  onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf

BC858CDXV6 BC858CDXV6

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 7.3. Size:172K  onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf

BC858CDXV6 BC858CDXV6

BC856BDW1T1G,BC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred DevicesDual General PurposeTransistorshttp://onsemi.comPNP Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Fr

 7.4. Size:156K  onsemi
bc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf

BC858CDXV6 BC858CDXV6

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 7.5. Size:178K  lrc
lbc858cdw1t1g.pdf

BC858CDXV6 BC858CDXV6

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which is65designed for low power surface mount applications.4We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 7.6. Size:182K  lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf

BC858CDXV6 BC858CDXV6

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 7.7. Size:194K  lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf

BC858CDXV6 BC858CDXV6

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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