2N5542 Specs and Replacement
Type Designator: 2N5542
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO61
2N5542 Substitution
- BJT ⓘ Cross-Reference Search
2N5542 datasheet
2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5545 0.5 to 4.5 50 1.5 50 5 2N5546 0.5 to 4.5 50 1.5 50 10 2N5547 0.5 to 4.5 50 1.5 50 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match... See More ⇒
Detailed specifications: 2N5535, 2N5536, 2N5537, 2N5538, 2N5539, 2N554, 2N5540, 2N5541, 13005, 2N555, 2N5550, 2N5551, 2N5552, 2N5552-1, 2N5552-2, 2N5552-4, 2N5559
Keywords - 2N5542 pdf specs
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