DTA144EE Datasheet, Equivalent, Cross Reference Search

-100mA / -50V Digital transistors (with built-in resistors) DTA144EM / DTA144EE / DTA144EUA / DTA144EKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTA144EM1.2Features 0.321) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external (1)(2)input resistors (see the equivalent circuit). 0.220.130.4

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth DTA144EEMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Digital Transistors Built-i

FM120-M WILLASTHRUDTA144EEPNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board s

SMD Type TransistorsDigital TransistorsDTA144EE (KDTA144EE)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1 Features +0.050.2 -0.05 0.150.05 Built-in bias resistors enable the configuration of2 1 an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors30.30.05 with com

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA144EEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA144EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA144EEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA144EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit

TransistorsDigital transistors (built-in resistors)DTA144EE / DTA144EUA / DTA144EKA /DTA144ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi

DTA144E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R147kDTA144EM DTA144EEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 47k 2) Built-in bias resistors enable the configuration

DTA144EEB Transistors -100mA / -50V Digital transistors (with built-in resistors) DTA144EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of th

DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

CHENMKO ENTERPRISE CO.,LTDCHDTA144EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu