DTC114EE Datasheet and Replacement
Type Designator: DTC114EE
SMD Transistor Code: 24_8A
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package:
SC75
SOT416
- BJT Cross-Reference Search
DTC114EE Datasheet (PDF)
..1. Size:152K rohm
dtc114ee.pdf 

100mA / 50V Digital transistors (with built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t
..2. Size:420K wietron
dtc114ee.pdf 

DTC114EE SeriesBias Resistor Transistor NPN Silicon3P b Lead(Pb)-FreeCOLLECTOR123R11R2BASESC-89(SOT-523F)2EMITTERMaximum Ratings (TA=25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage 50 VVCEOVCBO VCollector-Base Voltage 50mAIC 100Collector Current-ContinuousThermal CharacteristicsCharacteristics Symbol Max UnitTo
..3. Size:409K willas
dtc114ee.pdf 

FM120-M WILLASTHRUDTC114EENPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spa
..4. Size:1006K kexin
dtc114ee.pdf 

SMD Type TransistorsDigital TransistorsDTC114EE (KDTC114EE)SOT-523 U nit:m m Features+0.11.6 -0.1+0.11.0 -0.1 Repetitive peak off-state voltages :50V+0.050.2 -0.05 0.1+0.01-0.01 The bias resistors consist of thinfilm resistors with complete isolation2 1to allow negative biasing of the input. Only the on/off conditions need to3+0.25be set fo
..5. Size:671K cn shikues
dtc114ee.pdf 

DTC114EENPN Silicon Epitaxial Planar Digital TransistorCollectorFeatures(Output) With built-in bias resistors R1Base Simplify circuit design (Input) Reduce a quantity of parts and R2manufacturing process Emitter(Common)Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Input Voltage VI - 10 to +
0.1. Size:56K motorola
pdtc114ee 4.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input
0.2. Size:55K motorola
pdtc114eef 2.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1
0.3. Size:56K philips
pdtc114ee 4.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input
0.4. Size:55K philips
pdtc114eef 2.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1
0.5. Size:82K rohm
dtc114eeb.pdf 

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f
0.6. Size:1522K rohm
dtc114eefra dtc114ekafra dtc114emfha dtc114euafra.pdf 

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of
0.7. Size:71K rohm
dtc114ee-eua-eka-eca 24 sot416 323 346 23.pdf 

TransistorsDigital transistors (built-in resistors)DTC114EE / DTC114EUA / DTC114EKADTC114ECA / DTC114ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow n
0.8. Size:545K diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf 

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
0.9. Size:352K diodes
ddtc114ee.pdf 

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
0.10. Size:144K onsemi
sdtc114eet1g.pdf 

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
0.11. Size:92K onsemi
dtc114eet1-series.pdf 

DTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba
0.12. Size:144K onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf 

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
0.13. Size:116K onsemi
dtc114eet1 8a-m sot416.pdf 

DTC114EET1 SERIESBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba
0.14. Size:435K lrc
ldtc114eet1g.pdf 

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesNPN Silicon Surface Mount TransistorsS-LDTC114EET1G Serieswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons
0.15. Size:95K chenmko
chdtc114eegp.pdf 

CHENMKO ENTERPRISE CO.,LTDCHDTC114EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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History: 2SC3217
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