MCH4014
Datasheet, Equivalent, Cross Reference Search
Type Designator: MCH4014
SMD Transistor Code: GM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 8000
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MCPH4
MCH4014
Transistor Equivalent Substitute - Cross-Reference Search
MCH4014
Datasheet (PDF)
..1. Size:369K sanyo
mch4014.pdf 
MCH4014Ordering number : ENA1921SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4014High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
..2. Size:307K onsemi
mch4014.pdf
Ordering number : ENA1921AMCH4014RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
8.1. Size:40K sanyo
mch4013.pdf
Ordering number : ENA1268 MCH4013SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4013and OSC ApplicationsFeatures High cut-off frequency : fT=22.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition
8.2. Size:368K sanyo
mch4016.pdf
MCH4016Ordering number : ENA1922SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4016High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
8.3. Size:368K sanyo
mch4017.pdf
MCH4017Ordering number : ENA1912SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4017High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
8.4. Size:368K sanyo
mch4015.pdf
MCH4015Ordering number : ENA1911SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4015High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
8.5. Size:296K onsemi
mch4016.pdf
Ordering number : ENA1922MCH4016RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
8.6. Size:297K onsemi
mch4017.pdf
Ordering number : ENA1912MCH4017RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
8.7. Size:294K onsemi
mch4015.pdf
Ordering number : ENA1911MCH4015RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
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