MJB5742 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJB5742
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: D2PAK
MJB5742 Transistor Equivalent Substitute - Cross-Reference Search
MJB5742 Datasheet (PDF)
mjb5742.pdf
MJB5742T4GNPN Silicon PowerDarlington TransistorsThe Darlington transistors are designed for high-voltage powerswitching in inductive circuits.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantPOWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES, 400 VOLTS Switching Regulators100 WATTS Inverters Solenoid an
mjb5742t4g.pdf
MJB5742T4GNPN Silicon PowerDarlington TransistorsThe Darlington transistors are designed for high-voltage powerswitching in inductive circuits.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantPOWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES, 400 VOLTS Switching Regulators100 WATTS Inverters Solenoid an
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
