MJB5742 Specs and Replacement
Type Designator: MJB5742
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: D2PAK
MJB5742 Substitution
- BJT ⓘ Cross-Reference Search
MJB5742 datasheet
MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high-voltage power switching in inductive circuits. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant POWER DARLINGTON Applications TRANSISTORS Small Engine Ignition 8 AMPERES, 400 VOLTS Switching Regulators 100 WATTS Inverters Solenoid an... See More ⇒
MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high-voltage power switching in inductive circuits. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant POWER DARLINGTON Applications TRANSISTORS Small Engine Ignition 8 AMPERES, 400 VOLTS Switching Regulators 100 WATTS Inverters Solenoid an... See More ⇒
Detailed specifications: MCH6544, MCH6545, MJ21195, MJ21196, MJB41C, MJB42C, MJB44H11, MJB45H11, 13005, MJD128, MJD253, MJD44E3, MJE15032, MJE15033, MJE15034, MJE15035, MJF31C
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