MJD128 Datasheet and Replacement

MJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingapplications.www.onsemi.comFeatures Monolithic Construction With Built-in Base-Emitter Shunt ResistorsSILICON High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTOR Epoxy Meets UL 94 V-0 @ 0.125 in

isc Silicon PNP Darlington Power Transistor MJD128DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

Order this documentMOTOROLAby MJD122/DSEMICONDUCTOR TECHNICAL DATANPN*MJD122Complementary DarlingtonPNPMJD127*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS

MJD122MJD127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP122 ANDTIP1271APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIER.TO-252(Suffix

MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD122 NPNMJD127 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage V

MJD122(NPN)TO-251/TO-525-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 100 VVCEO Collector-Emitter Voltage 100 VVEBO Emitter-Bas

MJD127(NPN)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VVEBO Emitter-B

MJD122NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* High DC current gainD-PAK(TO-252)* Electrically similar to popular TIP122* Built-in a damper diode at E-CABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage 100 VVCEO100 VCollector-Emitter VoltageVEBOEmitter-Base Voltage 5

SEMICONDUCTOR MJD122ITECHNICAL DATANPN Silicon Darlington TransistorMJD122ITO-251-3LFEATURES High DC Current Gain1.BASE Electrically Similar to Popular TIP122 Built-in a Damper Diode at E-C2.COLLECTOR3.EMITTER We declare that the material of product compliance with RoHS requirements.Equivalent CircuitCBR1 R2R1 8kER2 0.12k MAXI

SEMICONDUCTOR MJD122TECHNICAL DATANPN Silicon Darlington TransistorMJD122IAIFEATURES CJ High DC Current Gain Electrically Similar to Popular TIP122DIM MILLIMETERSA 6.50 0.2 Built-in a Damper Diode at E-CB 5.60 0.2C 5.20 0.2D 1.50 0.2We declare that the material of E 2.70 0.2F 2.30 0.1product compliance with RoHS requirements.

MJD127DSilicon PNP Darlington Power TransistorDESCRIPTIONLow Collector-Emitter saturation voltageLead formed for surface mount applicationsHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXI

MJD122DSilicon NPN Darlington Power TransistorDESCRIPTIONLow Collector-Emitter saturation voltageLead formed for surface mount applicationsHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a