2N557 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N557
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N557 Transistor Equivalent Substitute - Cross-Reference Search
2N557 Datasheet (PDF)
2n5575.pdf
2N5575Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 70V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
Datasheet: 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 , BC556 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , 2N5579 , 2N558 , 2N5580 , 2N5581 .