2N5578 Specs and Replacement
Type Designator: 2N5578
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 2000 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO66
2N5578 Substitution
- BJT ⓘ Cross-Reference Search
2N5578 datasheet
2N5575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 70V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
Detailed specifications: 2N5552-4, 2N5559, 2N556, 2N5560, 2N557, 2N5575, 2N5576, 2N5577, 2SC2383, 2N5579, 2N558, 2N5580, 2N5581, 2N5582, 2N5583, 2N5583LP, 2N5584
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