MMUN2216L Datasheet, Equivalent, Cross Reference Search
Type Designator: MMUN2216L
SMD Transistor Code: A8F
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
MMUN2216L Transistor Equivalent Substitute - Cross-Reference Search
MMUN2216L Datasheet (PDF)
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MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
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Lead FreeRoHS CompliantMEI
nsvmmun2217lt1g.pdf
MMUN2217L,NSVMMUN2217LDigital Transistors (BRT)R1 = 4.7 kW, R2 = 10 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The Bias ResistorCOLLECTORTransistor (BRT) contains a single transistor with a monolithic bias (OUTPU
mmun2211lt1-d.pdf
MMUN2211LT1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf
MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
mmun2217l mmun2217lt1g.pdf
MMUN2217L,NSVMMUN2217LDigital Transistors (BRT)R1 = 4.7 kW, R2 = 10 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The Bias ResistorCOLLECTORTransistor (BRT) contains a single transistor with a monolithic bias (OUTPU
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MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
mmun2211.pdf
MMUN2211 SeriesCOLLECTOR3Bias Resistor Transistor3BASE R1NPN Silicon1R212P b Lead(Pb)-Free2EMITTERSOT-23MAXIMUM RATINGSRating SymbolValue Unit50 VdcCollector-Emitter Voltage VCEOCollector-Base Voltage 50 VdcVCBOCollector Current-Continuous I 100 mAdcCTHERMAL CHARACTERISTICSCharacteristics Symbol Value UnitTotal Device Dissipation FR-5 Board (1
mmun2211 mmun2241.pdf
NPN Silicon Epitaxial Planar Transistorfor switching and interface circuit and drive circuit applications Resistor ValuesType R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic PackageMMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2MMUN2231 2.2 2.2 Emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
