MUN2211 Datasheet, Equivalent, Cross Reference Search
Type Designator: MUN2211
SMD Transistor Code: 8A
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SC59
MUN2211 Transistor Equivalent Substitute - Cross-Reference Search
MUN2211 Datasheet (PDF)
mun2211t.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN2211T1/DBias Resistor TransistorMUN2211T1NPN Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
mmun2211lt1-d.pdf
MMUN2211LT1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series
mun2211t1.pdf
MUN2211T1 SeriesPreferred DevicesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two re
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MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
mun2211t1g mun2212t1g mun2213t1g mun2214t1g mun2215t1g mun2216t1g mun2230t1g mun2231t1g mun2232t1g mun2233t1g mun2234t1g mun2236t1g mun2237t1g mun2240t1g mun2241t1g.pdf
MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network
mun2211jt1g.pdf
MUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
mmun2211.pdf
MMUN2211 SeriesCOLLECTOR3Bias Resistor Transistor3BASE R1NPN Silicon1R212P b Lead(Pb)-Free2EMITTERSOT-23MAXIMUM RATINGSRating SymbolValue Unit50 VdcCollector-Emitter Voltage VCEOCollector-Base Voltage 50 VdcVCBOCollector Current-Continuous I 100 mAdcCTHERMAL CHARACTERISTICSCharacteristics Symbol Value UnitTotal Device Dissipation FR-5 Board (1
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LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
mun2211-34.pdf
SMD Type TransistorsNPN TransistorsMUN2211 ~ MUN2234 SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1PIN3CollectorPIN1R1(Output)base1.Base(Input)R22.EmitterPIN23.collectorEmitter(Ground) Absolute Maximum
mmun2211lt1 mmun2212lt1 mmun2213lt1 mmun2214lt1 mmun2215lt1 mmun2216lt1 mmun2230lt1 mmun2231lt1 mmun2232lt1 mmun2233lt1 mmun2234lt1.pdf
Lead FreeRoHS CompliantMEI
mmun2211 mmun2241.pdf
NPN Silicon Epitaxial Planar Transistorfor switching and interface circuit and drive circuit applications Resistor ValuesType R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic PackageMMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2MMUN2231 2.2 2.2 Emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD1383WA