NSS1C201MZ4T1G Specs and Replacement

Type Designator: NSS1C201MZ4T1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 2 A

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT223 TO261

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NSS1C201MZ4T1G datasheet

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NSS1C201MZ4T1G

NSS1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

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NSS1C201MZ4T1G

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont... See More ⇒

 3.2. Size:104K  onsemi

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NSS1C201MZ4T1G

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont... See More ⇒

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Detailed specifications: NSS12200WT1G, NSS12201L, NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, 2SD669, NSS20101JT1G, NSS20200L, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8

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