NST30010MXV6 Datasheet, Equivalent, Cross Reference Search
Type Designator: NST30010MXV6
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.1 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SOT563
NST30010MXV6 Transistor Equivalent Substitute - Cross-Reference Search
NST30010MXV6 Datasheet (PDF)
nst30010mxv6t1g.pdf
NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a
nst30010mxv6t1g nsvt30010mxv6t1g.pdf
NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
