All Transistors. BC848W Datasheet

 

BC848W Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC848W
   SMD Transistor Code: 1M_1M*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT323

 BC848W Transistor Equivalent Substitute - Cross-Reference Search

   

BC848W Datasheet (PDF)

 ..1. Size:124K  nxp
bc848b bc848w.pdf

BC848W BC848W

BC848 series30 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC848B SOT23 - TO-236AB BC858BBC848W SOT323 SC-70 - BC858W1.2 Features G

 ..2. Size:272K  siemens
bc846w bc847w bc848w bc849w bc850w.pdf

BC848W BC848W

NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO

 ..3. Size:361K  cdil
bc846w bc847w bc848w.pdf

BC848W BC848W

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848WSOT-323NPN Formed SMD PackageMarkingBC846W =1D BC847AW =1EBC846AW =1A BC847BW =1FBC846BW =1B BC847CW =1GBC847W =1H BC848W =1MGeneral Purpose Switching and Amplification.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified other

 ..4. Size:768K  jiangsu
bc846w bc847w bc848w.pdf

BC848W BC848W

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsBC846WTRANSISTOR (NPN) BC847WSOT-323 BC848W 1. BASE2. EMITTERFEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W

 ..5. Size:35K  kec
bc846w bc847w bc848w.pdf

BC848W BC848W

SEMICONDUCTOR BC846W/7W/8WTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2High Voltage : BC846W VCEO=65V. _+B 1.25 0.15_+C 0.90 0.10For Complementary With PNP Type BC856W/857W/858W.31D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30K 0.0

 ..6. Size:1023K  kexin
bc846w bc847w bc848w.pdf

BC848W BC848W

SMD Type TransistorsNPN TransistorsBC846W,BC847W,BC848W(KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC846W 80 Collector - Base Voltage BC847W VCBO 50BC848W 30BC846W 65 Collector - Emitter Volt

 ..7. Size:518K  slkor
bc846w bc847w bc848w bc849w bc850w.pdf

BC848W BC848W

BC846W-BC850WNPN Silicon Epitaxial Planar Transistorfor general purpose and switching applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage

 0.1. Size:898K  secos
bc846w,bc847w,bc848w.pdf

BC848W BC848W

BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications BaseEmitter CollectorSOT-323 A LCollector 33MARKING Top View C B

 9.1. Size:207K  motorola
bc846awt bc847awt bc848awt bc849awt bc850awt.pdf

BC848W BC848W

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

 9.2. Size:220K  motorola
bc846alt bc847alt bc848alt bc849alt bc850alt.pdf

BC848W BC848W

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

 9.3. Size:124K  philips
bc848 ser.pdf

BC848W BC848W

BC848 series30 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC848B SOT23 - TO-236AB BC858BBC848W SOT323 SC-70 - BC858W1.2 Features G

 9.4. Size:46K  philips
bc846f bc847f bc848f series 2.pdf

BC848W BC848W

DISCRETE SEMICONDUCTORSDATA SHEETM3D425BC846F; BC847F; BC848F seriesNPN general purpose transistors1999 May 18Preliminary specificationSupersedes data of 1998 Nov 10Philips Semiconductors Preliminary specificationNPN general purpose transistors BC846F; BC847F; BC848F seriesFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Low current (max. 10

 9.5. Size:136K  fairchild semi
bc846 bc847 bc848 bc849 bc850-series.pdf

BC848W BC848W

April 2011BC846 - BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC8502 Complement to BC856 ... BC860SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

 9.6. Size:58K  samsung
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

NPN EPITAXIALBC846/847/848/849/850 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO:BC846 80 V:BC847/850 50 V:BC848/849 30 VCollector E

 9.7. Size:273K  siemens
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

NPN Silicon AF Transistors BC 846 ... BC 850Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,BC 859, BC 860 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 846 A 1As Q62702-C1772 B E C SOT-23BC 846 B 1Bs Q6

 9.8. Size:145K  rohm
bc848bw bc848bw bc848b.pdf

BC848W BC848W

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. 2.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEIAJ : SC-7

 9.9. Size:522K  rohm
bc848bw bc848b.pdf

BC848W BC848W

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. SOT-3232.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEI

 9.10. Size:369K  diodes
bc846aw-bc848cw.pdf

BC848W BC848W

BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Complementary PNP Types: BC856W BC858W Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

 9.11. Size:446K  diodes
bc846 bc847 bc848-a-b-c.pdf

BC848W BC848W

BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion SOT-23 Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes

 9.12. Size:299K  diodes
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

 9.13. Size:34K  diodes
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

BC846 BC847SOT23 NPN SILICON PLANAR BC848 BC849GENERAL PURPOSE TRANSISTORSBC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 EC 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

 9.14. Size:116K  diodes
bc846 bc847 bc848.pdf

BC848W BC848W

BC846AW - BC848CW NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available (BC856W-BC858W) CDim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 B ED 0.65 Nomina

 9.15. Size:46K  diodes
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC848W BC848W

BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating

 9.16. Size:182K  infineon
bc846series bc847series bc848series bc849series bc850series.pdf

BC848W BC848W

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.17. Size:876K  infineon
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf

BC848W BC848W

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

 9.18. Size:180K  infineon
bc848bl3 bc850bf.pdf

BC848W BC848W

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.19. Size:180K  infineon
bc848bf bc847bf.pdf

BC848W BC848W

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.21. Size:220K  mcc
bc846a bc847 bc848 bc849c sot-23.pdf

BC848W BC848W

 9.22. Size:81K  mcc
bc846 bc847 bc848 2.pdf

BC848W BC848W

MCCBC846ATMMicro Commercial Components20736 Marilla Street ChatsworthTHRUMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC848CFax: (818) 701-4939FeaturesNPN Power Dissipation: 0.225W (Tamb=25 )(Note 1) Collector Current: 0.1A Plastic-Encapsulate Case Material: Molded Plastic. UL FlammabilityTransistorsClassification Rating 94V-0 and MSL Rati

 9.23. Size:666K  mcc
bc846aw-bw bc847aw-bw-cw bc848aw-bw-cw sot-323.pdf

BC848W BC848W

MCCBC846AW/BWMicro Commercial ComponentsMicro Commercial ComponentsBC847AW/BW/CW20736 Marilla Street ChatsworthCA 91311BC848AW/BW/CWPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Low current (max. 100mA)General Purpose Low voltage (max. 65V) Epo

 9.24. Size:622K  mcc
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf

BC848W BC848W

M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I

 9.25. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC848W BC848W

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 9.26. Size:218K  onsemi
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdf

BC848W BC848W

DATA SHEETwww.onsemi.comDual General PurposeTransistorsSOT-363/SC-88CASE 419BNPN DualsSTYLE 1BC846BDW1, BC847BDW1,(3) (2) (1)BC848CDW1These transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(4) (5) (6)Features S and NSV Prefixes for Automotiv

 9.27. Size:144K  onsemi
bc847bdw1t1g bc848cdw1t1g.pdf

BC848W BC848W

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 9.28. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC848W BC848W

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 9.29. Size:158K  onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC848W BC848W

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 9.30. Size:68K  onsemi
bc848cdxv6t1g bc847cdxv6t1g.pdf

BC848W BC848W

BC847CDXV6T1,BC847CDXV6T5BC848CDXV6T1,BC848CDXV6T5Dual General Purposehttp://onsemi.comTransistorsNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forQ1 Q2low power surface mount applications. Lead-Free Solder Plating(4) (5) (6)MAXIMUM RATINGSBC847CDXV6T1Rating Symb

 9.31. Size:1432K  onsemi
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf

BC848W BC848W

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements

 9.32. Size:131K  onsemi
bc846bpdw1t1g bc847bpdw1t1g bc848cpdw1t1g.pdf

BC848W BC848W

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

 9.33. Size:131K  onsemi
bc848clt1g bc848blt1g.pdf

BC848W BC848W

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 9.34. Size:109K  onsemi
nsvbc848bwt1g.pdf

BC848W BC848W

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 9.35. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC848W BC848W

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 9.36. Size:178K  onsemi
bc846bwt1g bc847awt1g bc847bwt1g bc847cwt1g bc848bwt1g bc848cwt1g.pdf

BC848W BC848W

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 9.37. Size:116K  onsemi
nsvbc848clt1g.pdf

BC848W BC848W

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 9.38. Size:216K  onsemi
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf

BC848W BC848W

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

 9.39. Size:68K  onsemi
bc848bwt1g.pdf

BC848W BC848W

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

 9.40. Size:96K  onsemi
bc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC848W BC848W

BC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forlow power surface mount applications.Q1 Q2Features These are Pb-Free Devices(4) (5) (6)BC847CDXV6T1MAXIMUM RATINGSRating Symb

 9.41. Size:132K  onsemi
bc847cdxv6t1g bc848cdxv6t1g.pdf

BC848W BC848W

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 9.42. Size:131K  onsemi
bc848alt1g bc850blt1g.pdf

BC848W BC848W

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 9.43. Size:68K  onsemi
bc848awt1g bc847cwt1g.pdf

BC848W BC848W

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

 9.44. Size:68K  onsemi
bc848cwt1g bc847awt1g.pdf

BC848W BC848W

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

 9.45. Size:128K  onsemi
bc846 bc847 bc848 series.pdf

BC848W BC848W

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM

 9.46. Size:131K  onsemi
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc

 9.47. Size:177K  onsemi
bc847bpdw1t1g bc848cpdw1t1g.pdf

BC848W BC848W

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 9.48. Size:208K  onsemi
bc848cpdw1t1g bc846bpdw1t1g bc847bpdw1t1g.pdf

BC848W BC848W

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

 9.49. Size:229K  onsemi
bc846bdw1 bc847bdw1 bc848cdw1.pdf

BC848W BC848W

Dual General PurposeTransistorsNPN DualsBC846BDW1, BC847BDW1,BC848CDW1www.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.FeaturesSOT-363/SC-88 S and NSV Prefixes for Automotive and Other ApplicationsCASE 419BSTYLE 1Requiring Unique Si

 9.50. Size:127K  onsemi
bc846bdw1t1g bc847bdw1t1g bc848cdw1t1g.pdf

BC848W BC848W

BC846BDW1T1G,BC847BDW1T1G,BC848CDW1T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(4) (5) (6)Com

 9.51. Size:110K  onsemi
nsvbc848cdw1t1g.pdf

BC848W BC848W

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and

 9.52. Size:262K  onsemi
bc846bpdw1 bc847bpdw1 bc848cpdw1.pdf

BC848W BC848W

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.53. Size:200K  onsemi
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC848W BC848W

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 9.54. Size:131K  onsemi
bc849clt1g bc848blt3g.pdf

BC848W BC848W

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 9.55. Size:173K  auk
bc848uf.pdf

BC848W BC848W

7 BC848UFSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose application Switching application Features High voltage : VCEO=30V Complementary pair with BC858UF Ordering Information Type NO. Marking Package Code BC848UF BS SOT-323F : hFE rank Outline Dimensions unit : mm 1.95~2.25 1.20~1.40 1 3 2 PIN Conne

 9.56. Size:82K  auk
bc848.pdf

BC848W BC848W

BC848SemiconductorSemiconductorNPN Silicon TransistorDescriptions General purpose application Switching applicationFeatures High voltage : VCEO=30V Complementary pair with BC858Ordering InformationType NO. Marking Package Code BC848 SA SOT-23: hFE rankOutline Dimensions unit : mm2.40.11.300.11320.45~0.600.2 Min.PIN Connections1.

 9.57. Size:262K  auk
bc848u.pdf

BC848W BC848W

BC848UNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=30V 2 Complementary pair with BC858U Ordering Information SOT-323 Type NO. Marking Package Code BS BC848U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum rat

 9.58. Size:77K  rectron
bc846-bc847-bc848.pdf

BC848W BC848W

BC846 BC847 BC848NPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)SOT-23 SMD PackageAbsolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC846 BC847 BC848 UNITSDESCRIPTIONVCBOCollector Base Voltage 80 50 30 VCollector Emmitter Voltage (VBE = 0V) VCES80 50 30 VVCEOCollector Emitt

 9.59. Size:302K  secos
bc846a-bc847a-bc848a.pdf

BC848W BC848W

BC846A, BBC847A, B, CElektronische BauelementeBC848A, B, CA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESADim Min MaxLnA 2.800 3.040General Purpose Transistor NPN Typen3 B 1.200 1.400Collect current : 0.1ASTop ViewO O BnC 0.890 1.110Operating Temp. : -55 C ~ +150 C1 2nD 0.370 0.500RoHS compliant productV GG 1.780 2.040H 0.013

 9.60. Size:201K  taiwansemi
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848W BC848W

BC846A/B, BC847A/B/C, BC848A/B/CTaiwan SemiconductorSmall Signal Product200mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface mount device type- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) under plate- Pb free and RoHS compliant- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC- Halo

 9.61. Size:444K  cdil
bc846 bc847 bc848.pdf

BC848W BC848W

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848PIN CONFIGURATION (NPN)1 = BASE2 = EMITTERSOT-233 = COLLECTOR3Formed SMD PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"12MarkingBC846 =1DBC846A=1ABC846B=1BBC847 =1HBC847A=1EBC847B=1FBC8

 9.62. Size:740K  jiangsu
ad-bc846 ad-bc847 ad-bc848.pdf

BC848W BC848W

www.jscj-elec.com AD-BC846/47/48 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC846/47/48 Series Plastic-Encapsulated Transistor AD-BC846/47/48 series Transistor (NPN) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC846-A =1A; AD-BC846-B =1B AD-BC847-A =1E; AD-BC8

 9.63. Size:513K  jiangsu
bc846 bc847 bc848.pdf

BC848W BC848W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC8481. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base V

 9.64. Size:43K  kec
bc846 bc847 bc848.pdf

BC848W BC848W

SEMICONDUCTOR BC846/7/8TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15High Voltage : BC846 VCEO=65V.C 1.30 MAX2For Complementary With PNP Type BC856/857/858. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10L 0.55

 9.65. Size:79K  zovie
bc848.pdf

BC848W BC848W

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconCOLLECTOR33BASE11BC848A,B,C22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 30 VdcCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 5.0 VdcCollector Current-Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max. UnitoTotal

 9.66. Size:2205K  htsemi
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Vo

 9.67. Size:2003K  htsemi
bc846 bc847 bc848.pdf

BC848W BC848W

BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Voltage V

 9.68. Size:1702K  lge
bc846aw-bw bc847aw-bw-cw bc848aw-bw-cw.pdf

BC848W BC848W

BC846AW,BWBC847AW,BW,CWBC848AW,BW,CW STO-323 Transistor(NPN)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

 9.69. Size:1721K  lge
bc846 bc847 bc848.pdf

BC848W BC848W

BC846A,BBC847A,B,CBC848A,B,C SOT-23 Transistor(NPN)1. BASE 2. EMITTER SOT-233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848

 9.70. Size:101K  wietron
bc846bdw bc847 bc848.pdf

BC848W BC848W

BC846BDW SeriesGeneral Purpose Transistor2 13654NPN Duals12P b Lead(Pb)-Free345 6SOT-363(SC-88)NPN+NPNMaximum RatingsBC846 BC847Rating Symbol BC848Unit65 45Collector-Emitter Voltage V 30CEO Vdc80 50Collector-Base Voltage VCBO 30Vdc6.0Emitter-Base Voltage VEBO 6.0 5.0VdcCollector Current-Continuous IC 100 100100 mAdcThermal Characteri

 9.71. Size:2832K  wietron
bc846aw bc847aw bc848aw.pdf

BC848W BC848W

BC846AW/BWBC847AW/BW/CWBC848AW/BW/CWGeneral Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2EMITTERSOT-323(SC-70)Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80VVBC847 CBO 50BC848 30Emitter-Base Voltag

 9.72. Size:204K  wietron
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

BC846A/B-BC847A/B/CBC848A/B/C-BC849B/CBC850B/CGeneral Purpose TransistorNPN Silicon COLLECTOR3MARKING DIAGRAM33XX = Device11 Code (See2BASE Table Below)SOT-23*Moisture Sensitivity Level: 11 2*ESD Rating - Human Body Model:>4000V 2EMITTER -Machine Model:>400V( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emi

 9.73. Size:495K  wietron
bc846bpdw bc847 bc848.pdf

BC848W BC848W

BC846BPDW SeriesNPN/PNP Dual General Purpose Transistors2 13P b Lead(Pb)-Free65412345 6NPN+PNPSOT-363(SC-88)MAXIMUM RATINGS - NPNRating Symbol BC846 BC847 BC848 UnitCollector-Emitter Voltage VCEO 65 45 30 VCollector-Base Voltage VCBO 80 50 30 VEmitter-Base Voltage VEBO 6.0 6.0 5.0 VCollector Current - Continuous IC 100 100 100 mAdcMAXIMUM RATINGS - PNP

 9.74. Size:351K  willas
bc846 bc847 bc848 bc850-xlt1.pdf

BC848W BC848W

BC8 6A/BLT1FM120-M BC8 7A/B/CLT1WILLASTHRUBC8 8A/B/CLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose Transistors SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface

 9.75. Size:66K  hsmc
hbc848.pdf

BC848W BC848W

Spec. No. : HE6843 HI-SINCERITY Issued Date : 1994.07.29 Revised Date : 2008.01.30 MICROELECTRONICS CORP. Page No. : 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag

 9.76. Size:1090K  shenzhen
bc846 bc847 bc848.pdf

BC848W BC848W

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCB

 9.77. Size:1073K  can-sheng
bc846 bc847 bc848 sot-23.pdf

BC848W BC848W

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR(NPN) SOT-23 BC847A,B,C BC848A,B,C 1BASE 2EMTTER FEATURES 3COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS(TA=25 unless other

 9.78. Size:393K  semtech
bc846 bc847 bc848 bc849 bc850.pdf

BC848W

 9.79. Size:242K  semtech
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC848W BC848W

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

 9.80. Size:227K  lrc
lbc848cdw1t1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GLBC847BDW1T1GNPN DualsLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produ

 9.81. Size:172K  lrc
lbc848cpdw1t1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.We declare that the material of product comp

 9.82. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 9.83. Size:402K  lrc
lbc848blt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.84. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 9.85. Size:226K  lrc
lbc848bdw1t1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1GLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.We declare that the material of product compliance wit

 9.86. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 9.87. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 9.88. Size:394K  lrc
lbc848awt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.89. Size:402K  lrc
lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g lbc848blt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.90. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 9.91. Size:407K  lrc
lbc848clt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

 9.92. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 9.93. Size:402K  lrc
lbc848alt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 9.94. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.95. Size:227K  lrc
lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6

 9.96. Size:404K  lrc
lbc847clt3g lbc848alt1g lbc848alt3g lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.97. Size:396K  lrc
lbc848cwt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.98. Size:173K  lrc
lbc848bpdw1t1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.We declare that the material of product comp

 9.99. Size:396K  lrc
lbc848bwt1g.pdf

BC848W BC848W

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GNPN SiliconLBC847AWT1G,BWT1GWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb Free

 9.100. Size:272K  first silicon
bc848s.pdf

BC848W BC848W

SEMICONDUCTORBC846S ~BC850STECHNICAL DATAGeneral Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 V3 Machine Model: >400 V21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcBC846 65BC847, BC850 45BC848, BC849 303COLLECTORCollectorBase Voltage VCBO VdcBC846

 9.101. Size:1598K  kexin
bc846 bc847 bc848.pdf

BC848W BC848W

SMD Type TransistorsNPN TransistorsBC846~BC848 (KC846~KC848)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Ideally suited for automatic insertion For switching and AF amplifier applications1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC846 BC847 BC848 Unit C

 9.102. Size:446K  panjit
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf

BC848W BC848W

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

 9.103. Size:536K  panjit
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf

BC848W BC848W

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

 9.104. Size:1070K  panjit
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf

BC848W BC848W

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

 9.105. Size:330K  panjit
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf

BC848W BC848W

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

 9.106. Size:123K  comchip
bc848bw-g bc847bw-g.pdf

BC848W BC848W

Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055

 9.107. Size:123K  comchip
bc848cw-g bc848aw-g.pdf

BC848W BC848W

Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055

 9.108. Size:145K  comchip
bc848a-g bc848b-g.pdf

BC848W BC848W

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

 9.109. Size:145K  comchip
bc848c-g bc847a-g.pdf

BC848W BC848W

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

 9.110. Size:500K  dxc
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf

BC848W BC848W

Dual General Purpose TransistorsDual General Purpose TransistorsNPN/PNP Duals (Complimentary)DBC846BPDW1T1GDBC847BPDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isDBC847CPDW1T1Gdesigned for low power surface mount applications.DBC848BPDW1T1GWe declare that the material of product compliance wit

 9.111. Size:1130K  slkor
bc846 bc847 bc848.pdf

BC848W BC848W

BC846~BC848NPN Silicon Epitaxial Planar TransistorNPN Silicon Epitaxial Planar Transistorwww.slkormicro.com1BC846~BC848www.slkormicro.com2BC846~BC848www.slkormicro.com3BC846~BC848www.slkormicro.com4

 9.112. Size:218K  sunroc
bc848lt1.pdf

BC848W

SUNROC BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter V

 9.113. Size:433K  umw-ic
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

RUMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collect

 9.114. Size:4648K  anbon
bc846 bc847 bc848.pdf

BC848W BC848W

BC846/BC847/BC848SOT-23 NPN Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion SOT-23 For switching and AF amplifier applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Volta

 9.116. Size:2633K  high diode
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

BC846-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; CB ESymbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846BC847 50 30

 9.117. Size:1245K  mdd
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

BC847SOT-23 Plastic-Encapsulate TransistorSOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, CBC848A, B, C 1. BASE2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsPACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)S

 9.118. Size:380K  powersilicon
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

DATA SHEET BC846A/B,BC847A/B/C,BC848A/B/C NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30 ~ 65 V CURRENT 100 mA FEATURES IDEALLY SUITED FOR AUTOMATIC INSERTION FOR SWITCHING AND AF AMPLIFIER APPLICATIONS NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC =100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA

 9.121. Size:2177K  wpmtek
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC848W BC848W

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

 9.122. Size:1237K  cn yongyutai
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

BC846/7/8 TRANSI STOR (NPN)BC846BC847BC848Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848Collector-Emitter Voltage 6

 9.123. Size:553K  cn zre
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

BC846/BC847/BC848 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC846A=1A BC846B=1B Small Outline Plastic PackageBC847A=

 9.124. Size:2167K  cn twgmc
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

BC846-BC850BC846/847/848/849/850 TRANSISTORNPNFEATURESSOT-23 Low current (max. 100 mA) Low voltage (max. 65 V).1BASE 2EMITTER APPLICATIONS3COLLECTOR General purpose switching and amplification.DESCRIPTIONNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Sy

 9.125. Size:3444K  cn twgmc
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC848W BC848W

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

 9.126. Size:303K  cn yangzhou yangjie elec
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

RoHS RoHSCOMPLIANT COMPLIANTBC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage 80 BC84

 9.127. Size:211K  cn yangzhou yangjie elec
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf

BC848W BC848W

RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J

 9.128. Size:302K  cn yangzhou yangjie elec
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC848W BC848W

RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL

 9.129. Size:455K  cn doeshare
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848W BC848W

BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE:

 9.130. Size:306K  cn cbi
bc846 bc847 bc848 bc849 bc850.pdf

BC848W BC848W

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended.1.Base 2.Emitter 3.Collector SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec

 9.131. Size:158K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf

BC848W BC848W

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

 9.132. Size:221K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848W BC848W

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC846/847/848MAXIMUM RATINGS Characteristic Symbol Unit(BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter VoltageV 65 45 30 VdcCEOCollector-Base VoltageV 80 50 30 VdcCBOEmitter-Base Voltage

 9.133. Size:637K  cn hottech
bc848a bc848b bc848c.pdf

BC848W BC848W

BC848BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC858 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

 9.134. Size:255K  cn hottech
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC848W BC848W

Plastic-Encapsulate TransistorsFEATURES(NPN)BC846A/BFor general AF applications(NPN)BC847A/B/CHigh collector current(NPN)BC848A/B/CHigh current gainLow collector-emitter saturation voltageMarkingBC846A BC846B BC847A BC847B1A 1B 1E 1FBC847C BC848A BC848B BC848C1. BASE2. EMITTER SOT-231G 1J 1K 1L3. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Par

 9.135. Size:2559K  cn xch
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC848W BC848W

BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsSOT-23A Dim Min MaxDEVICE MARKING CA 0.37 0.51BC846A=1A; BC846B=1B; B C B1.20 1.40BC847A=1E; BC847B=1F; BC847C=1G; C2.30 2.50TOP VIEWB EBC848A=1J; BC848B=1K: BC848C=1LD0.89 1.03D E

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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