BCP69-16 Datasheet and Replacement

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP69-16,BCP69-25Features High Current and Low Voltage Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Oper

BCP69-25PNP Silicon AF Transistor For general AF applications43 High collector current21 High current gain Low collector-emitter saturation voltage Complementary type: BCP68 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223* Marking is the same as

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP69T1/DBCP69T1PNP SiliconMotorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP69PNP medium power transistor1999 Apr 08Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationPNP medium power transistor BCP69FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 base2, 4 collectorAPPLICATIONS3 emitter Gen

BCP6920 V, 1 A PNP medium power transistorRev. 06 2 December 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor in a Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number[1] Package PackageconfigurationNXP JEITABCP69 SOT223 SC-73 medium powerBCP69-16BCP69-16/DGBCP69-16/INBCP69-25[1] /DG: halog

January 2007BCP69PNP General Purpose Amplifier4 This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A.3 Sourced from Process 77. 21SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -20 VVCBO Co

BCP69; BC869; BC69PA20 V, 2 A PNP medium power transistorsRev. 7 12 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA SO

PNP Silicon AF Transistor BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCP 69 BCP 69 Q62702-C2130 B C E C SOT-223BCP 69-10 BCP 69-10 Q62702-C2131BCP 69-16 BCP 69-16 Q62702-C2132BCP 69-25 BCP 69-2

CBCP68 NPNCBCP69 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARYDESCRIPTION:SMALL SIGNAL SILICONThe CENTRAL SEMICONDUCTOR CBCP68 and TRANSISTORSCBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKING: FULL PART NUMBERS

SOT223 PNP SILICON PLANARBCP69MEDIUM POWER TRANSISTORISSUE 3 FEBRUARY 1996 T i C i II V T T 8EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

BCP69T1Preferred Device PNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223-4 package, which is designed for medium power surfacehttp://onsemi.commount applications. High Current: IC = -1.0 AMEDIUM POWER The SOT-223-4 Package can be soldered using wave or

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered

BCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered Using Wave o

UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP68 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Fr

BCP69PNP Transistor Elektronische BauelementeSilicon Epitaxial TransistorRoHS Compliant ProductSOT-223Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1AMillimeter MillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 BCP69E 0 10

BCP69PNP Silicon Epitaxial TransistorCOLLECTOR2, 44P b Lead(Pb)-Free 1.BASE2.COLLECTORBASE13.EMITTER1 24.COLLECTOR33SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)Rating Symbol Value UnitVCBOCollector to Base Voltage-25 VVCEOCollector to Emitter Voltage-20 VVEBOCollector to Base Voltage -5.0 VICCollector Current A-1.0Total Device Disspa

Spec. No. : C314L3 Issued Date : 2005.09.29 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 Medium Power PNP Epitaxial Planar Transistor BCP69L3 Features For AF driver and output stage Low saturation voltage High collector current. Complementary to BCP68L3 Pb-free package Symbol Outline BCP69L3SOT-223 CEBBase CCC

SMD Type TransistorsPNP TransistorsBCP69 (KCP69)Unit:mmSOT-2236.500.23.000.1 Features4 High current (max. 1 A) Low voltage (max. 20 V) Complements to BCP681 2 32 0.2502.30 (typ)Gauge Plane1.Base1 2.Collector0.700.13.Emitter4.60 (typ)3 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector