All Transistors. BFQ540 Datasheet

 

BFQ540 Datasheet and Replacement


   Type Designator: BFQ540
   SMD Transistor Code: N4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

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BFQ540 Datasheet (PDF)

 ..1. Size:238K  philips
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BFQ540

BFQ540NPN wideband transistorRev. 04 25 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:

 ..2. Size:62K  philips
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BFQ540

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BFQ540NPN wideband transistorProduct specification 2000 May 23Supersedes data of 1998 Aug 27Philips Semiconductors Product specificationNPN wideband transistor BFQ540FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89plastic package. High output voltagepage Low noisePINNING Gold met

 ..3. Size:208K  inchange semiconductor
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BFQ540

isc Silicon NPN RF Transistor BFQ540DESCRIPTIONHigh GainHigh Output VoltageLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF, UHF and CATV amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 15 VCES

Datasheet: BFG325 , BFG325W , BFG410W , BFG424F , BFG424W , BFG540 , BFG540W , BFG541 , D882 , BFQ591 , BFR505 , BFR505T , BFR540 , BFR92AW , BFR93AW , BFR94A , BFR94AW .

History: 2SD1564

Keywords - BFQ540 transistor datasheet

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