BFQ591 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ591
SMD Transistor Code: BCp
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.25 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
BFQ591 Transistor Equivalent Substitute - Cross-Reference Search
BFQ591 Datasheet (PDF)
bfq591.pdf
isc Silicon NPN RF Transistor BFQ591DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in MATV or CATV amplifiers and RFcommunications subscribers equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .