BFQ591 Datasheet. Specs and Replacement

Type Designator: BFQ591  📄📄 

SMD Transistor Code: BCp

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.25 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

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BFQ591 datasheet

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BFQ591

isc Silicon NPN RF Transistor BFQ591 DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

Detailed specifications: BFG325W, BFG410W, BFG424F, BFG424W, BFG540, BFG540W, BFG541, BFQ540, S8050, BFR505, BFR505T, BFR540, BFR92AW, BFR93AW, BFR94A, BFR94AW, BFS20W

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