BFR540 Datasheet. Specs and Replacement

Type Designator: BFR540  📄📄 

SMD Transistor Code: 33*_N29

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO236AB

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BFR540 datasheet

 ..1. Size:110K  philips

bfr540 4.pdf pdf_icon

BFR540

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BFR540 NPN 9 GHz wideband transistor Product specification 2000 May 30 Supersedes data of 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor in a SOT23 plastic package. Low noise figure High tra... See More ⇒

 ..2. Size:101K  philips

bfr540.pdf pdf_icon

BFR540

BFR540 NPN 9 GHz wideband transistor Rev. 05 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Applications RF front end wideband applic... See More ⇒

 ..3. Size:220K  inchange semiconductor

bfr540.pdf pdf_icon

BFR540

isc Silicon NPN RF Transistor BFR540 DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.). ABSOLU... See More ⇒

 9.1. Size:48K  philips

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BFR540

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFR54 NPN medium frequency transistor 1997 Jul 11 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium frequency transistor BFR54 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1... See More ⇒

Detailed specifications: BFG424W, BFG540, BFG540W, BFG541, BFQ540, BFQ591, BFR505, BFR505T, A1015, BFR92AW, BFR93AW, BFR94A, BFR94AW, BFS20W, BFS505, BFT25A, BFT93W

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